The subject matter is the processes of analysis and mechanisms of interaction of EMP-induced currents and voltages with the processes characterizing the functional purpose of radio products, is usually carried out within the framework of the theory of distributed circuits. The presented approach makes it possible to evaluate the performance criteria in general (for example, to evaluate the critical energy characterizing a thermal breakdown), however, issues related to the determination of various types of electromagnetic interactions that occur directly in the components of a product under the influence of EMR remain open. The aim is the possibility of setting up theoretical and experimental studies based on the proposed calculation model for excitation of natural vibrations of a semiconductor structure (exponential growth of amplitude). The parameters of a third-party pulsed electromagnetic field, induced currents and characteristics of semiconductor devices have been established within which the regime of amplification of natural vibrations of a semiconductor structure is observed. The objectives are: mechanisms of interaction of induced currents with surface vibrations of semiconductor components of a radio product under the influence of pulsed electromagnetic radiation. The methods used are: methods of the theory of small perturbations in determining the spectrum of natural oscillations of the system - currents induced by electromagnetic radiation and natural oscillations of the components of the radio product. The following results are obtained: The mechanisms for the appearance of reversible failures of semiconductor components of radio products under the influence of third-party pulsed electromagnetic fields are determined. It has been established that the presence of a current induced by external radiation leads to the establishment of a mode of amplification of natural oscillations of semiconductor components of a radio product (reversible failures). Conclusion. Quantitative estimates of amplification (generation) modes of oscillations of semiconductor devices, distorting their performance depending on the parameters of external electromagnetic influence, allows developing mechanisms for electromagnetic compatibility of microwave radio products. A comparative analysis of the calculated data obtained in the work can be used in the manufacture of radio devices operating in the millimeter and submillimeter range (amplifiers, generators and frequency converters).